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inchange semiconductor product specification silicon npn power transistors 2SC867 description ? with to-66 package ? high collector-base breakdown voltage : v cbo =400v(min) applications ? for high voltage and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 400 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 1 a i cm collector current-peak 2 a p d total power dissipation t c =25 ?? 23 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC867 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma; i b =0 150 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =1a; i b =0.2 a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.2 a 1.5 v i cbo collector cut-off current v cb =400v;i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe dc current gain i c =0.1a ; v ce =3v 50 f t transition frequency i c =0.2a ; v ce =10v 8 mhz inchange semiconductor product specification 3 silicon npn power transistors 2SC867 package outline fig.2 outline dimensions |
Price & Availability of 2SC867 |
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